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Samsung 990 EVO Plus 4TB M.2 NVMe 2.0 PCIe Gen 4.0 Internal SSD ( MZ-V9S4T0BW )

Samsung

Samsung 990 EVO Plus 4TB M.2 NVMe 2.0 PCIe Gen 4.0 Internal SSD ( MZ-V9S4T0BW )

29,150.00

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Samsung 990 EVO Plus 4TB M.2 NVMe 2.0 PCIe Gen 4.0 Internal SSD ( MZ-V9S4T0BW )

  • Form Factor :-M.2
  • Capacity :- 4TB
  • Sequential Read Speed :-Up to 7,250 MB/s
  • Sequential Write Speed :-Up to 6,300 MB/s
  • Model Code (Capacity) :-MZ-V9S4T0BW(4TB)

General Feature

  • Application :-Client PCs
  • FORM FACTOR :-M.2 (2280)
  • INTERFACE :-PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0
  • DIMENSION (WxHxD) :-80.15 x 22.15 x 2.38mm
  • WEIGHT :-Max 9.0g Weight
  • STORAGE MEMORY :-Samsung V-NAND TLC
  • CONTROLLER :-Samsung in-house Controller
  • CACHE MEMORY :-HMB(Host Memory Buffer)

Special Feature

  • TRIM Support :-Supported
  • S.M.A.R.T Support :-Supported
  • GC (GARBAGE COLLECTION) :-Auto Garbage Collection Algorithm
  • ENCRYPTION SUPPORT :-AES 256-bit Encryption (Class 0) TCG/Opal
    IEEE1667 (Encrypted drive)
  • WWN SUPPORT :-Not supported
  • DEVICE SLEEP MODE SUPPORT :-Yes

Performance

  • SEQUENTIAL READ :-4TB: Up to 7,250 MB/s
  • SEQUENTIAL WRITE :-4TB: Up to 6,300 MB/s
  • RANDOM READ (4KB, QD32) :- 4TB: Up to 1,050,000 IOPS
  • RANDOM WRITE (4KB, QD32) :- 4TB: Up to 1,400,000 IOPS

Environment

  • AVERAGE POWER CONSUMPTION (System Level) :-4TB: Average: Read 5.5 W / Write 4.8 W
  • POWER CONSUMPTION (IDLE):- 4TB: Typical 60 mW
  • POWER CONSUMPTION (DEVICE SLEEP) :- 4TB: Typical 5mW
  • ALLOWABLE VOLTAGE:- 3.3 V ± 5 % Allowable voltage
  • RELIABILITY (MTBF) :- 1.5 Million Hours Reliability (MTBF)
  • OPERATING TEMPERATURE:- 0 – 70 ℃ Operating Temperature
  • Shock:- 1,500 G & 0.5 ms (Half sine)

Accessories

  • INSTALLATION KIT:- Not Available

Software

  • MANAGEMENT SW : Magician Software for SSD management

Warranty

 MZ-V9S4T0BW(4TB) :- 5-year or 2400 TBW limited warranty

SKU: MZ-V7S4T0BW Categories: , , , , Brand:
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